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2SD108 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD108 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION · High DC current gain- : hFE = 2000 (Min) @ IC = 1A · Collector-Emitter Sustaining Voltage- : VCEO(SUS)=80V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power switching · Hammer drivers · Series and shunt regulator · Audio amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 5 A ICP Collector Current-Peak 10 A IB Base Current 0.12 A PC Collector Power Dissipation@TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Podobny numer części - 2SD108 |
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Podobny opis - 2SD108 |
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