2SK1575 datasheet(2/6 Pages) HITACHI

Numer części	2SK1575

Szczegółowy opis	Silicon N-Channel MOS FET

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Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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2 / 6 page

2SK1575

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

180

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

16

A

Channel dissipation

Pch*

1

200

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage*

1

V

(BR)DSS

180

—

V

I

D = 10 mA, VGS = 0

Gate to source breakdown

voltage*

1

V

(BR)GSS

±20

—

V

I

G = ±100 µA, VDS = 0

Zero gate voltage drain current*

1

I

DSS

—

1

mA

V

DS = 140 V, VGS = 0

Gate to source cutoff voltage*

1

V

GS(off)

0.5

—

2.0

V

I

D = 1 mA, VDS = 10 V

Drain to source cutoff voltage*

1

V

DS(on)

—

3.8

6.0

V

I

D = 4 A, VGS = 10 V*

2

Forward transfer admittance*

1

|y

fs|

0.9

1.25

—

S

I

D = 3 A, VDS = 20 V*

2

Input capacitance*

1

Ciss

—

440

—

pF

V

GS = 5 V, VDS = 0

f = 1 MHz

Output capacitance*

1

Coss

—

75

—

pF

V

DS = 50 V, VGS = 0

f = 1 MHz

Reverse transfer capacitance*

1

Crss

—

0.5

—

pF

V

GD = –50 V, f = 1 MHz

Output Power

Po

180

220

—

W

V

DS = 80 V, IDQ = 0.2 A

Drain Efficiency

ηD

—

65

—

%

f = 190 MHz, Pin = 10 W

Notes: 1. Shows / unit FET

2. Pulse Test

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