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TYN1225 Arkusz danych(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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TYN1225 Arkusz danych(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 4 page TYN1225 KERSMI ELECTRONIC CO.,LTD. 1200V www.kersemi.com 1 Description This MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Part NO. Marking Package TYN1225 TYN1225 TO-220 BVDSS ID 12000V 25A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 60 ° C/W RƟJA Thermal Resistance, Junction to Ambient1 1.3 |
Podobny numer części - TYN1225 |
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