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2SA1666U Arkusz danych(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

Numer części 2SA1666U
Szczegółowy opis  PNP Silicon Epitaxial Planar Transistor
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Strona internetowa  http://www.semtech.net.cn
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Dated20/01/2016 Rev: 03
®
SEMTECH ELECTRONICS LTD.
2SA1666U
PNP Silicon Epitaxial Planar Transistor
for high current application
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
50
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
2
A
Base Current
-IB
0.4
A
Total Power Dissipation
Ptot
0.5
1
1)
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
- 55 to + 150
1) When mounted on a 250 mm2 x 0.8 t ceramic substrate.
Characteristics at Ta = 25℃
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 500 mA
Current Gain Group
at -VCE = 2 V, -IC = 1.5 A
O
Y
hFE
hFE
hFE
70
120
40
-
-
-
140
240
-
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
-
100
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
50
-
-
V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VBE(sat)
-
-
1.2
V
Transition Frequency
at -VCE = 2 V, -IC = 500 mA
fT
-
120
-
MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
40
-
pF


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