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WFP13N50C Arkusz danych(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP13N50C Arkusz danych(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 8 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WT-017-Rev.A0 Apr.2013 WFP13N50C Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Features � 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25℃) 13 A Continuous Drain Current(@Tc=100℃) 8 A IDM Drain Current Pulsed (Note1) 52 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 845 mJ IAR Avalanche Current (note 1) 13 A EAR Repetitive Avalanche Energy (Note1) 5 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 190 W Derating Factor above 25℃ 1.56 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 0.66 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W G D S |
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