Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

WFP13N50C Arkusz danych(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Numer części WFP13N50C
Szczegółowy opis  Silicon N-Channel MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Strona internetowa  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFP13N50C Arkusz danych(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WFP13N50C Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 6Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 7Page - Shenzhen Winsemi Microelectronics Co., Ltd WFP13N50C Datasheet HTML 8Page - Shenzhen Winsemi Microelectronics Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
www.winsemi.com
Tel : +86-755-8250 6288
Fax : +86-755-8250 6299
2/8
Silicon
Silicon
Silicon
Silicon N-Channel
N-Channel
N-Channel
N-Channel MOSFET
MOSFET
MOSFET
MOSFET
WFP13N50C Product Description
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=500V,VGS=0V
-
-
1
µA
VDS=400V,TC=125℃
10
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
500
-
-
V
Breakdown voltage Temperature
Coefficient
△BVDSS/△TJ
ID=250µA,Referenced to 25℃
-
0.6
-
V/℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
-
0.37
0.49
Forward Transconductance
gfs
VDS=40V,ID=6.5A
-
15
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
1560
2090
pF
Reverse transfer capacitance
Crss
-
25
30
Output capacitance
Coss
-
210
260
Switching time
Turn-On rise time
tr
VDD=250V,
ID=13A
RG=25Ω
(Note4,5)
-
160
270
ns
Turn-On delay time
td(on)
-
90
180
Turn-Off Fall time
tf
-
60
140
Turn-Off delay time
td(off)
-
150
260
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=400V,
VGS=10V,
ID=13A
(Note4,5)
-
37
50
nC
Gate-source charge
Qgs
-
10.9
-
Gate-drain("miller") Charge
Qgd
-
17.2
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
13
A
Pulse drain reverse current
IDRP
-
-
-
52
A
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=13A,VGS=0V,
dIDR / dt =100 A / µs
-
410
-
ns
Reverse recovery charge
Qrr
-
4.5
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9.0mH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution


Podobny numer części - WFP13N50C

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Shenzhen Winsemi Microe...
WFP13N50 WINSEMI-WFP13N50 Datasheet
567Kb / 7P
   Silicon N-Channel MOSFET
More results

Podobny opis - WFP13N50C

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Leshan Radio Company
L2SK3019LT1G LRC-L2SK3019LT1G_15 Datasheet
671Kb / 4P
   Silicon N-Channel MOSFET
logo
Shenzhen Winsemi Microe...
WGP15G65 WINSEMI-WGP15G65 Datasheet
529Kb / 6P
   Silicon N-Channel MOSFET
WFU5N60B WINSEMI-WFU5N60B_14 Datasheet
201Kb / 8P
   Silicon N-Channel MOSFET
WFF8N65L WINSEMI-WFF8N65L Datasheet
244Kb / 8P
   Silicon N-Channel MOSFET
WFD20N06 WINSEMI-WFD20N06 Datasheet
615Kb / 6P
   Silicon N-Channel MOSFET
WFP8N60B WINSEMI-WFP8N60B Datasheet
271Kb / 8P
   Silicon N-Channel MOSFET
WFU2N60B WINSEMI-WFU2N60B_13 Datasheet
252Kb / 8P
   Silicon N-Channel MOSFET
K2611B WINSEMI-K2611B_14 Datasheet
288Kb / 8P
   Silicon N-Channel MOSFET
WFP12N65 WINSEMI-WFP12N65 Datasheet
389Kb / 7P
   Silicon N-Channel MOSFET
WFP540 WINSEMI-WFP540 Datasheet
348Kb / 5P
   Silicon N-Channel MOSFET
WFW24N50N WINSEMI-WFW24N50N Datasheet
437Kb / 7P
   Silicon N-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com