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WFP13N50C Arkusz danych(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP13N50C Arkusz danych(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 8 page www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/8 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WFP13N50C Product Description WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=500V,VGS=0V - - 1 µA VDS=400V,TC=125℃ 10 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 500 - - V Breakdown voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25℃ - 0.6 - V/℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=6.5A - 0.37 0.49 Ω Forward Transconductance gfs VDS=40V,ID=6.5A - 15 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 1560 2090 pF Reverse transfer capacitance Crss - 25 30 Output capacitance Coss - 210 260 Switching time Turn-On rise time tr VDD=250V, ID=13A RG=25Ω (Note4,5) - 160 270 ns Turn-On delay time td(on) - 90 180 Turn-Off Fall time tf - 60 140 Turn-Off delay time td(off) - 150 260 Total gate charge(gate-source plus gate-drain) Qg VDD=400V, VGS=10V, ID=13A (Note4,5) - 37 50 nC Gate-source charge Qgs - 10.9 - Gate-drain("miller") Charge Qgd - 17.2 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 13 A Pulse drain reverse current IDRP - - - 52 A Forward voltage(diode) VDSF IDR=13A,VGS=0V - - 1.5 V Reverse recovery time trr IDR=13A,VGS=0V, dIDR / dt =100 A / µs - 410 - ns Reverse recovery charge Qrr - 4.5 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9.0mH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤13A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
Podobny numer części - WFP13N50C |
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Podobny opis - WFP13N50C |
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