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WFF10N65 Arkusz danych(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF10N65 Arkusz danych(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
1 / 8 page Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFF10N65 Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WT-F018-Rev.A1 Jan.2014 1010 Features � 10A,650V,RDS(on)(Max 0.95Ω)@VGS=10V � Ultra-low Gate Charge(Typical 34nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 650 V ID Continuous Drain Current(@Tc=25℃) 10* A Continuous Drain Current(@Tc=100℃) 6.0* A IDM Drain Current Pulsed (Note1) 40* A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 712 mJ IAR Avalanche Current (note 1) 9.5 A EAR Repetitive Avalanche Energy (Note1) 17.5 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 50 W Derating Factor above 25℃ 0.4 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 2.5 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W G D S |
Podobny numer części - WFF10N65_14 |
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Podobny opis - WFF10N65_14 |
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