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MB85R1002ANC-GE1 Arkusz danych(PDF) 1 Page - Fujitsu Component Limited. |
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MB85R1002ANC-GE1 Arkusz danych(HTML) 1 Page - Fujitsu Component Limited. |
1 / 16 page FUJITSU SEMICONDUCTOR DATA SHEET Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.7 Memory FRAM 1 M Bit (64 K × 16) MB85R1002A ■ DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R1002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • Bit configuration : 65,536 words × 16 bits • Read/write endurance : 1010 times • Operating power supply voltage : 3.0 V to 3.6 V • Operating temperature range : − 40 °C to + 85 °C • Data retention : 10 years ( + 55 °C) •LB and UB data byte control • Package : 48-pin plastic TSOP (1) DS501-00004-1v0-E |
Podobny numer części - MB85R1002ANC-GE1 |
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Podobny opis - MB85R1002ANC-GE1 |
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