LSM6DS0 datasheet(12/59 Pages) STMICROELECTRONICS

Numer części	LSM6DS0

Szczegółowy opis	Embedded temperature sensor

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Module specifications

LSM6DS0

12/59

DocID025604 Rev 3

2.2

Electrical characteristics

@ Vdd = 2.2 V, T = 25 °C unless otherwise noted

Table 4. Electrical characteristics

2.2.1

Recommended power-up sequence

For the power-up sequence please refer to the following figure, where:



Trise is the time for the power supply to rise from 10% to 90% of its final value



Twait is the time delay between the end of the Vdd_IO ramp (90% of its final value)

and the start of the Vdd ramp

Figure 2. Recommended power-up sequence

Symbol

Parameter

Test conditions

Min.

Typ.(1)

Max.

Unit

Vdd

Supply voltage

1.71

3.6

V

Vdd_IO Power supply for I/O

1.71

Vdd + 0.1

V

LA_Idd

Accelerometer current consumption in

normal mode

ODR = 10 Hz

60

μA

ODR = 50 Hz

160

ODR

 119 Hz

330

G_Idd

Gyroscope current consumption in

normal mode

4.0

mA

Top

Operating temperature range

-40

+85

°C

Trise

Time for power supply rising(2)

0.01

100

ms

Twait

Time delay between Vdd_IO and Vdd (2)

010

ms

1. Typical specifications are not guaranteed.

2. Please refer to Section 2.2.1: Recommended power-up sequence for more details.

Trise

Twait

Trise

0V

Vdd_IO

Vdd

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