SI-3552 datasheet(2/7 Pages) VISHAY

Numer części	SI-3552

Szczegółowy opis	N- and P-Channel 30-V (D-S) MOSFET

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Si3552DV

Vishay Siliconix

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2-2

Document Number: 70971

S-61831—Rev. A, 23-Aug-99

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

N-Ch

1.0

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

P-Ch

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

N-Ch

"100

nA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

P-Ch

"100

nA

ZG

V l

D i C

I

VDS = 24 V, VGS = 0 V

N-Ch

1

A

Zero Gate Voltage Drain Current

IDSS

VDS = –24 V, VGS = 0 V

P-Ch

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

N-Ch

5

mA

VDS = –24 V, VGS = 0 V, TJ = 55_C

P-Ch

–5

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

5

A

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

P-Ch

–5

A

DiS

OS

R

i

a

VGS = 10 V, ID = 2.5 A

N-Ch

0.085

0.105

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –10 V, ID = –1.8 A

P-Ch

0.165

0.200

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 2.0 A

N-Ch

0.140

0.175

W

VGS = –4.5 V, ID = –1.2 A

P-Ch

0.298

0.360

Forward Transconductancea

gfs

VDS = 10 V, ID = 2.5 A

N-Ch

4.3

S

Forward Transconductancea

gfs

VDS = –15 V, ID = –1.8 A

P-Ch

2.4

S

Diode Forward Voltagea

VSD

IS = 1.05 A, VGS = 0 V

N-Ch

0.81

1.10

V

Diode Forward Voltagea

VSD

IS = –1.05 A, VGS = 0 V

P-Ch

–0.83

–1.10

V

Dynamicb

Total Gate Charge

Qg

NCh

l

N-Ch

2.1

3.2

C

Total Gate Charge

Qg

N-Channel

P-Ch

2.4

3.6

C

Gate-Source Charge

Qgs

N Channel

VDS = 15 V, VGS = 5 V, ID = 1.8 A

N-Ch

0.7

nC

Gate-Source Charge

Qgs

P-Channel

V15 V V

5 V I

1 8 A

P-Ch

0.9

nC

Gate-Drain Charge

Qgd

VDS = –15 V, VGS = –5 V, ID = –1.8 A

N-Ch

0.7

Gate-Drain Charge

Qgd

P-Ch

0.8

Turn-On Delay Time

td(on)

NCh

l

N-Ch

7

11

Turn-On Delay Time

td(on)

NCh

l

P-Ch

8

12

Rise Time

tr

N-Channel

VDD = 15 V, RL = 15 W

N-Ch

9

14

Rise Time

tr

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

P-Ch

12

18

Turn-Off Delay Time

td(off)

P-Channel

V15 V R

15

W

N-Ch

13

20

ns

Turn-Off Delay Time

td(off)

VDD = –15 V, RL = 15 W

ID ^ –1 A, VGEN = –10 V, RG = 6 W

P-Ch

12

18

ns

Fall Time

tf

ID

1 A, VGEN

10 V, RG

6

W

N-Ch

5

8

Fall Time

tf

P-Ch

7

11

Source-Drain

RR

Ti

trr

IF = 1.05 A, di/dt = 100 A/ms

N-Ch

35

60

Reverse Recovery Time

trr

IF = –1.05 A, di/dt = 100 A/ms

P-Ch

30

60

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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