SM16J45A datasheet(2/5 Pages) TOSHIBA

Numer części	SM16J45A

Szczegółowy opis	AC POWER CONTROL APPLICATIONS

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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SM16G45,SM16J45,SM16G45A,SM16J45A

2001-07-10

2

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Repetitive Peak Off−State Current

IDRM

VDRM = Rated

―

20

µA

I

T2 (+) , Gate (+)

―

1.5

II

T2 (+) , Gate (−)

―

1.5

III

T2 (−) , Gate (−)

―

1.5

Gate Trigger Voltage

IV

VGT

VD = 12V,

RL = 20Ω

T2 (−) , Gate (−)

―

V

I

T2 (+) , Gate (+)

―

30

II

T2 (+) , Gate (−)

―

30

III

T2 (−) , Gate (−)

―

30

SM16G45

SM16J45

IV

T2 (−) , Gate (+)

―

I

T2 (+) , Gate (+)

―

20

II

T2 (+) , Gate (−)

―

20

III

T2 (−) , Gate (−)

―

20

Gate Trigger

Current

SM16G45A

SM16J45A

IV

IGT

VD = 12V,

RL = 20Ω

T2 (−) , Gate (+)

―

mA

Peak On−State Voltage

VTM

ITM = 25A

―

1.5

V

Gate Non−Trigger Voltage

VGD

VD = Rated, Tc = 125°C

0.2

―

V

Holding Current

IH

VD = 12V, ITM = 2A

―

50

mA

SM16G45

SM16J45

10

―

Critical Rate of Rise of

Off−State Voltage at

Commutation

SM16G45A

SM16J45A

(dv / dt) c

VD = 400V,

(di / dt) c = − 8.7A / ms

Tj = 125°C

4

―

V / µs

Thermal Resistance

Rth (j−c)

Junction to Case, AC

―

1.4

°C / W

MARKING

* NUMBER

SYMBOL

MARK

* 1

TOSHIBA PRODUCT MARK

SM16G45, SM16G45A

M16G45

* 2

SM16J45, SM16J45A

M16J45

* 3

TYPE

SM16G45A, SM16J45A

A

* 4

Example

8A: January 1998

8B: February 1998

8L: December 1998

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