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TP3069WM Arkusz danych(PDF) 5 Page - National Semiconductor (TI) |
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TP3069WM Arkusz danych(HTML) 5 Page - National Semiconductor (TI) |
5 / 18 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications VCC to GNDA 7V VBB to GNDA b 7V Voltage at any Analog Input or Output VCCa03V to VBBb03V Voltage at any Digital Input or Output VCCa03V to GNDAb03V Operating Temperature Range b 25 Cto a125 C Storage Temperature Range b 65 Cto a150 C Lead Temp (Soldering 10 sec) 300 C ESD (Human Body Model) J 1000V ESD (Human Body Model) N 1500V Latch-Up Immunity on Any Pin 100 mA Electrical Characteristics Unless otherwise noted limits printed in BOLD characters are guaranteed for VCC e a 50V g5% VBB eb50V g5% TA e 0 Cto70 C by correlation with 100% electrical testing at TA e 25 C All other limits are assured by correlation with other production tests andor product design and characterization All signals referenced to GNDA Typicals specified at VCC ea50V VBB eb50V TA e 25 C Symbol Parameter Conditions Min Typ Max Units POWER DISSIPATION (ALL DEVICES) ICC0 Power-Down Current (Note ) 05 15 mA IBB0 Power-Down Current (Note ) 005 03 mA ICC1 Active Current VPIe0V VFRO VPOa and VPOb unloaded 70 100 mA IBB1 Active Current VPIe0V VFRO VPOa and VPOb unloaded 70 100 mA DIGITAL INTERFACE VIL Input Low Voltage 06 V VIH Input High Voltage 22 V VOL Output Low Voltage DX ILe32 mA 04 V TSX ILe32 mA Open Drain 04 V VOH Output High Voltage DX IHeb32 mA 24 V IIL Input Low Current GNDAsVINsVIL All Digital Inputs b 10 10 m A IIH Input High Current VIHsVINsVCC b 10 10 m A IOZ Output Current in High Impedance DX GNDAsVOsVCC b 10 10 m A State (TRI-STATE) Note ICC0 and IBB0 are measured after first achieving a power-up state 5 |
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