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FM24CL64-S Arkusz danych(PDF) 7 Page - List of Unclassifed Manufacturers |
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FM24CL64-S Arkusz danych(HTML) 7 Page - List of Unclassifed Manufacturers |
7 / 13 page FM24CL64 Rev 2.0 July 2003 Page 7 of 13 that are loaded into the internal address latch. After the FM24CL64 acknowledges the address, the bus master issues a start condition. This simultaneously aborts the write operation and allows the read command to be issued with the device address LSB set to a 1. The operation is now a current address read. S A Slave Address 1 Data Byte 1 P By Master By FM24CL64 Start Address Stop Acknowledge No Acknowledge Data Figure 7. Current Address Read S A Slave Address 1 Data Byte 1 P By Master By FM24CL64 Start Address Stop Acknowledge No Acknowledge Data Data Byte A Acknowledge Figure 8. Sequential Read S A Slave Address 1 Data Byte 1 P By Master By FM24CL64 Start Address Stop No Acknowledge Data S A Slave Address 0 Address MSB A Start Address Acknowledge Address LSB A Figure 9. Selective (Random) Read Applications Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile, but the benefits combine in other ways. A short list of ideas is provided here. 1. Data collection. In applications where data is collected and saved, FRAM provides a superior alternative to other solutions. It is more cost effective than battery backup for SRAM and provides better write attributes than EEPROM. 2. Configuration. Any nonvolatile memory can retain a configuration. However, if the configuration changes and power failure is a possibility, the higher write endurance of FRAM allows changes to be recorded without restriction. Any time the system state is altered, the change can be written. This avoids writing to memory on power down when the available time is short and power scarce. 3. High noise environments. Writing to EEPROM in a noisy environment can be challenging. When severe noise or power fluctuations are present, the long write time of EEPROM creates a window of vulnerability during which the write can be corrupted. The fast write of FRAM is complete within a microsecond. This time is typically too short for noise or power fluctuation to disturb it. 4. Time to market. In a complex system, multiple software routines may need to access the nonvolatile memory. In this environment the time delay associated with programming EEPROM adds undue |
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