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TP0202K Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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TP0202K Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page TP0202K Vishay Siliconix Document Number: 71609 S-41777—Rev. D, 04-Oct-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 1200 1400 1600 ID = 200 mA Gate Charge Qg − Total Gate Charge (pC) VDS = 10 V VDS = 16 V 0 10 20 30 40 50 0 4 8 12 16 20 Capacitance VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V f = 1 MHz 0 200 400 600 800 1000 1200 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 012345 Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS = 10 V 3.5 V 3 V VGS − Gate-to-Source Voltage (V) TJ = −55_C 125_C 25_C 0 4 8 12 16 20 0 4 8 12 16 20 On-Resistance vs. Gate-Source Voltage VGS − Gate -to-Source Voltage (V) VGS = 4.5 V VGS = 10 V 4.5 V 6 V 8 V 7 V 5.5 V 5 V 4 V 0 2 4 6 8 10 12 14 0 200 400 600 800 1000 On-Resistance vs. Drain Current ID − Drain Current (mA) VGS = 4.5 V VGS = 10 V For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. |
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