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UPA3753GR Arkusz danych(PDF) 6 Page - Renesas Technology Corp |
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UPA3753GR Arkusz danych(HTML) 6 Page - Renesas Technology Corp |
6 / 7 page μPA3753GR Chapter Title R07DS1322EJ0100 Rev.1.00 Page 6 of 6 Jan 25, 2016 Package Drawings (Unit: mm) SOP-8 Equivalent Circuit Source Body Diode Gate Drain (1/2 circuit) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurre 1 : Source1 2 : Gate1 7, 8 : Drain1 3 : Source2 4 : Gate2 5, 6 : Darin2 P-SOP8-3.95 × 4.9-1.27 0.085g MASS[Typ.] FP-8DAV PRSP0008DD-D RENESAS Code JEITA Package Code Previous Code 8 5 1 4 bp Detail F Terminal cross section 1.27 1.08 0.40 L1 0.60 0.25 x 0.46 0.40 0.34 0.10 bp b1 c1 0.25 0.20 0.15 Max Nom Min Dimension in Millimeters Symbol Reference 5.3 4.90 D 3.95 E 0.14 A2 6.20 6.10 5.80 0.25 1.75 A 0.75 Z L 8° 0° c 1.27 e 0.1 y HE A1 D *1 *3 x M bp e Z (Ni/Pd/Au plating) 2. 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. NOTE) DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Index mark L1 L Detail F y Package Name SOP-8 |
Podobny numer części - UPA3753GR_16 |
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Podobny opis - UPA3753GR_16 |
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