Zakładka z wyszukiwarką danych komponentów |
|
UPD48576118F1 Arkusz danych(PDF) 15 Page - Renesas Technology Corp |
|
UPD48576118F1 Arkusz danych(HTML) 15 Page - Renesas Technology Corp |
15 / 52 page µµµµPD48576118F1 R10DS0257EJ0101 Rev. 1.01 Page 15 of 51 Jan. 15, 2016 2. Operation 2.1 Command Operation According to the functional signal description, the following command sequences are possible. All input states or sequences not shown are illegal or reserved. All command and address inputs must meet setup and hold times around the rising edge of CK. Table 2-1. Address Widths at Different Burst Lengths Burst Length Configuration x18 BL=2 A0–A20 BL=4 A0–A19 BL=8 A0–A18 Table 2-2. Command Table Operation Code CS# WE# REF# A0–AnNote1 BA0–BA2 Note Device DESELECT / No Operation DESEL / NOP H X X X X MRS: Mode Register Set MRS L L L OPCODE X 2 READ READ L H H A BA 3 WRITE WRITE L L H A BA 3 AUTO REFRESH AREF L H L X BA Notes 1. n = 21. 2. Only A0–A17 are used for the MRS command. 3. See Table 2-1. Remark X = “Don’t Care”, H = logic HIGH, L = logic LOW, A = valid address, BA = valid bank address 2.2 Description of Commands DESEL / NOP Note1 The NOP command is used to perform a no operation to the µPD48576109/18F1, which essentially deselects the chip. Use the NOP command to prevent unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. Output values depend on command history. MRS The mode register is set via the address inputs A0–A17. See Figure 2-5. Mode Register Bit Map for further information. The MRS command can only be issued when all banks are idle and no bursts are in progress. READ The READ command is used to initiate a burst read access to a bank. The value on the BA0–BA2 inputs selects the bank, and the address provided on inputs A0–A21 selects the data location within the bank. WRITE The WRITE command is used to initiate a burst write access to a bank. The value on the BA0–BA2 inputs selects the bank, and the address provided on inputs A0–A21 selects the data location within the bank. Input data appearing on the D is written to the memory array subject to the DM input logic level appearing coincident with the data. If the DM signal is registered LOW, the corresponding data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored (i.e., this part of the data word will not be written). |
Podobny numer części - UPD48576118F1 |
|
Podobny opis - UPD48576118F1 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |