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UPD48576209F1 Arkusz danych(PDF) 13 Page - Renesas Technology Corp |
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UPD48576209F1 Arkusz danych(HTML) 13 Page - Renesas Technology Corp |
13 / 54 page µµµµPD48576209F1, µµµµPD48576218F1, µµµµPD48576236F1 R10DS0256EJ0101 Rev. 1.01 Page 13 of 53 Jan. 15, 2016 Remarks 1. IDD specifications are tested after the device is properly initialized. 0°C ≤ TC ≤ 95°C; 1.7 V ≤ VDD ≤ 1.9 V, 2.38 V ≤ VEXT ≤ 2.63 V, 1.4 V ≤ VDDQ ≤ VDD, VREF = VDDQ/2 2. tCK = tDK = MIN., tRC = MIN. 3. Input slew rate is specified in Recommended DC Operating Conditions and Recommended AC Operating Conditions. 4. IDD parameters are specified with ODT disabled. 5. Continuous data is defined as half the DQ signals changing between HIGH and LOW every half clock cycles (twice per clock). 6. Continuous address is defined as half the address signals between HIGH and LOW every clock cycles (once per clock). 7. Sequential bank access is defined as the bank address incrementing by one ever tRC. 8. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL=4 this is every other clock. 9. CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than per clock cycle. |
Podobny numer części - UPD48576209F1 |
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Podobny opis - UPD48576209F1 |
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