Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

UPD48576209F1 Arkusz danych(PDF) 26 Page - Renesas Technology Corp

Numer części UPD48576209F1
Szczegółowy opis  576M-BIT Low Latency DRAM
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD48576209F1 Arkusz danych(HTML) 26 Page - Renesas Technology Corp

Back Button UPD48576209F1 Datasheet HTML 22Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 23Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 24Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 25Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 26Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 27Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 28Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 29Page - Renesas Technology Corp UPD48576209F1 Datasheet HTML 30Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 26 / 54 page
background image
µµµµPD48576209F1, µµµµPD48576218F1, µµµµPD48576236F1
R10DS0256EJ0101 Rev. 1.01
Page 26 of 53
Jan. 15, 2016
2.11 Read Operation (READ)
Read accesses are initiated with a READ command, as shown in Figure 2-12. Row and bank addresses are provided
with the READ command.
During READ bursts, the memory device drives the read data edge-aligned with the QK signal. After a programmable
READ latency, data is available at the outputs. The data valid signal indicates that valid data will be present in the next
half clock cycle.
The skew between QK and the crossing point of CK is specified as tCKQK. tQKQ0 is the skew between QK0 and the last valid
data edge considered the data generated at the DQ0–DQ17 in x36 and DQ0–DQ8 in x18 data signals. tQKQ1 is the skew
between QK1 and the last valid data edge considered the data generated at the DQ18–DQ35 in x36 and DQ9–DQ17 in
x18 data signals. tQKQx is derived at each QKx clock edge and is not cumulative over time.
After completion of a burst, assuming no other commands have been initiated, DQ will go High-Z. Back-to-back READ
commands are possible, producing a continuous flow of output data.
Minimum READ data valid window can be expressed as MIN.(tQKH, tQKL) – 2 x MAX.(tQKQx)
Any READ burst may be followed by a subsequent WRITE command. Figure 2-16. READ followed by WRITE, BL=2,
RL=4, WL=5, Configuration 1
and Figure 2-17. READ followed by WRITE, BL=4, RL=4, WL=5, Configuration 1
illustrate the timing requirements for a READ followed by a WRITE.
Figure 2-12. READ Command
Remark A : Address
BA: Bank address
CK#
CK
WE #
REF#
CS#
ADDRESS
BANK
ADDRESS
Don't care
A
BA


Podobny numer części - UPD48576209F1

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Renesas Technology Corp
UPD48576209FF-E18-DW1 RENESAS-UPD48576209FF-E18-DW1 Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48576209FF-E18-DW1-A RENESAS-UPD48576209FF-E18-DW1-A Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48576209FF-E24-DW1 RENESAS-UPD48576209FF-E24-DW1 Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48576209FF-E24-DW1-A RENESAS-UPD48576209FF-E24-DW1-A Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48576209FF-E25-DW1 RENESAS-UPD48576209FF-E25-DW1 Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
More results

Podobny opis - UPD48576209F1

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Renesas Technology Corp
UPD48576118F1 RENESAS-UPD48576118F1 Datasheet
1Mb / 52P
   576M-BIT Low Latency DRAM
UPD48576109 RENESAS-UPD48576109 Datasheet
1Mb / 52P
   576M-BIT Low Latency DRAM Separate I/O
Oct 01, 2012
UPD48576209 RENESAS-UPD48576209 Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48288209AF1 RENESAS-UPD48288209AF1 Datasheet
1Mb / 54P
   288M-BIT Low Latency DRAM
UPD48288118AF1 RENESAS-UPD48288118AF1 Datasheet
1Mb / 52P
   288M-BIT Low Latency DRAM
UPD48288209-A RENESAS-UPD48288209-A Datasheet
862Kb / 50P
   288M-BIT Low Latency DRAM Common I/O
Feb 01, 2013
UPD48288118-A RENESAS-UPD48288118-A Datasheet
843Kb / 48P
   288M-BIT Low Latency DRAM Separate I/O
Feb 01, 2013
logo
GSI Technology
GS4576C36GL-25I GSI-GS4576C36GL-25I Datasheet
2Mb / 63P
   576Mb CIO Low Latency DRAM (LLDRAM II)
logo
Micron Technology
MT49H8M32 MICRON-MT49H8M32 Datasheet
652Kb / 43P
   REDUCED LATENCY DRAM RLDRAM
logo
Renesas Technology Corp
RMHE41A184AGBG RENESAS-RMHE41A184AGBG Datasheet
644Kb / 52P
   1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com