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HT82M9BEE Arkusz danych(PDF) 3 Page - Holtek Semiconductor Inc |
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HT82M9BEE Arkusz danych(HTML) 3 Page - Holtek Semiconductor Inc |
3 / 44 page Pin Description Pin Name I/O ROM Code Option Description PA0~PA7 I/O Pull-high Pull-low Wake-up CMOS/NMOS/PMOS Bidirectional 8-bit input/output port. Each bit can be configured as a wake-up input by ROM code option. The input or output mode is con- trolled by PAC (PA control register). Pull-high resistor options: PA0~PA7 Pull-low resistor options: PA0~PA3 CMOS/NMOS/PMOS options: PA0~PA7 Falling edge wake-up options: PA0~PA1, PA4~PA7 Rising and falling edge wake-up options: PA2~PA3 PB0~PB3 PB4/SDA PB5~PB6 PB7/SCL I/O Pull-high Pull-low Wake-up Bidirectional 8-bit input/output port. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options). PB4 is wire-bonded with the SDA pad of the Data EEPROM. PB7 is wire-bonded with the SCL pad of the Data EEPROM. Pull-high resistor options: PB0~PB7 Pull-low resistor for options: PB2, PB3 Falling edge wake-up options: PB4/SDA, PB7/SCL PC0~PC3 I/O Pull-high Bidirectional 8-bit input/output port. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options). Pull-high resistor options: PC0~PC3 VSS ¾¾ Negative power supply, ground RES I ¾ Schmitt trigger reset input. Active low. VDD ¾¾ Positive power supply V33O O ¾ 3.3V regulator output USBD+/CLK I/O ¾ USBD+ or PS2 CLK I/O line USB or PS2 function is controlled by software control register USBD-/DATA I/O ¾ USBD- or PS2 DATA I/O line USB or PS2 function is controlled by software control register OSCI OSCO I O ¾ OSCI, OSCO are connected to a 6MHz or 12MHz crystal/resonator (de- termined by software instructions) for the internal system clock. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature...............................0 °Cto70°C IOL Total ..............................................................150mA IOH Total............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. HT82M9BEE/HT82M9BAE Rev. 1.50 3 December 22, 2008 |
Podobny numer części - HT82M9BEE_08 |
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Podobny opis - HT82M9BEE_08 |
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