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BUZ11 Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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BUZ11 Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page ©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A Typical Performance Curves Unless Otherwise Specified FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS TA, CASE TEMPERATURE ( oC) 0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 40 30 20 10 0 0 50 100 150 TC, CASE TEMPERATURE ( oC) VGS > 10V 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) 1 0.1 0.01 SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC t1 t2 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 µs 10 µs DC 1ms 10ms 100ms 103 102 101 100 100 101 102 2.5 µs OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25 oC TJ = MAX RATED SINGLE PULSE 60 50 40 30 20 10 0 0123456 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 8.0V VGS = 7.5V VGS = 7.0V VGS = 6.5V VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 10V VGS = 20V PULSE DURATION = 80 µs PD = 75W DUTY CYCLE = 0.5% MAX BUZ11 |
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