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1N3765 Arkusz danych(PDF) 1 Page - Naina Semiconductor ltd.

Numer części 1N3765
Szczegółowy opis  Standard Recovery Diode, 35A
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Producent  NAINA [Naina Semiconductor ltd.]
Strona internetowa  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

1N3765 Arkusz danych(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
1N3765 thru
1N3768R
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Standard Recovery Diode, 35A
Features
Glass passivated die
Low forward voltage drop
High surge capability
Low leakage current
Normal and Reverse polarity
Metric and UNF threads available
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions
Symbol
1N3765(R)
1N3766(R)
1N3767(R)
1N3768(R)
Units
Repetitive peak
reverse voltage
VRRM
700
800
900
1000
V
RMS reverse voltage
VRMS
490
560
630
700
V
DC blocking voltage
VDC
700
800
900
1000
V
Continuous forward
current
TC ≤ 140oC
IF(AV)
35
35
35
35
A
Surge non-repetitive
forward current,
half-sine wave
TC = 25oC
IFSM
475
475
475
475
A
Maximum peak
forward voltage
TJ = 25oC
VF
1.2
1.2
1.2
1.2
V
Reverse current
TJ = 25oC
IR
10
10
10
10
µA
TJ = 140oC
10
10
10
10
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
1N3765(R)
1N3766(R)
1N3767(R)
1N3768(R)
Units
Thermal resistance, junction to case
Rth(JC)
0.25
0.25
0.25
0.25
oC/W
Operating junction temperature range
TJ
-55 to 160
-55 to 160
-55 to 160
-55 to 160
oC
Storage temperature
Tstg
-55 to 160
-55 to 160
-55 to 160
-55 to 160
oC
Mounting torque, non-lubricated threads,
tighting on nut
F
3.4 ± 10%
Nm
Approximate weight
W
16
g
DO-203AB (DO-5)


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