Zakładka z wyszukiwarką danych komponentów |
|
STP5950 Arkusz danych(PDF) 2 Page - Stanson Technology |
|
STP5950 Arkusz danych(HTML) 2 Page - Stanson Technology |
2 / 5 page STP5950 P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250mA -100 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V -1 uA VDS=-80V,VGS=0V TJ=85℃ -10 Drain-source On- Resistance RDS(on) VGS=-10V,ID=-15A VGS=-4.5V,ID=-10A 36 40 45 55 mΩ Forward Transconductance gfs VDS=-30V,ID=-10A 21 S Diode Forward Voltage VSD IS=-1A,VGS=0V -1.0 V Dynamic Total Gate Charge Qg VDS=-50V VGS=-10V ID≡-10A 95 150 nC Gate-Source Charge Qgs 16 30 Gate-Drain Charge Qgd 13.8 26 Input Capacitance Ciss VDS =-25V VGS=0V F=1MHz 2800 3600 pF Output Capacitance Coss 1300 1700 Reverse TransferCapacitance Crss 320 420 Turn-On Time td(on) tr VDS=-50V RG= 25Ω ID=-5A 58 110 nS 24 50 Turn-Off Time td(off) tf 215 450 55 100 |
Podobny numer części - STP5950 |
|
Podobny opis - STP5950 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |