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KSD5701 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSD5701 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 3.5 A ICP Collector Current (Pulse) 10 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 40 250 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 2.5A 10 2.5 30 VCE(sat) Collector-Emitter Saturation Voltage IC = 2.5A, IB = 0.8A 5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.5A, IB = 0.8A 1.5 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 3 MHz VF Damper Diode Turn On Voltage IF = 3.5A 2 V tF Fall Time VCC = 200V, IC = 3A IB1 = 0.8A, IB2 = - 1.6A RL = 66.7Ω 0.4 µs KSD5701 High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Voltage : VCBO=1500V • High Switching Speed : tF = 0.4µs (Max.) • For Color TV C B E 50 Ω typ. Equivalent Circuit TO-3PF 1.Base 2.Collector 3.Emitter 1 |
Podobny numer części - KSD5701 |
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Podobny opis - KSD5701 |
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