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S9013 Arkusz danych(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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S9013 Arkusz danych(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 uA Collector cut-off current ICEO VCE=20V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 uA hFE(1) VCE=1V, IC=50mA 120 400 DC current gain hFE(2) VCE=1V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V Base-emitter voltage VBE VCB=1V,IC=10mA, 0.7 V Transition frequency fT VCE=6V,IC=20mA, f=30MHz 150 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 8 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400 SOT–23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com C,Oct,2014 JC T |
Podobny numer części - S9013 |
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Podobny opis - S9013 |
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