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RGT8NL65D Arkusz danych(PDF) 3 Page - Rohm |
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RGT8NL65D Arkusz danych(HTML) 3 Page - Rohm |
3 / 13 page www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Datasheet RGT8NL65D IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) μs VGE = 15V Tj = 25°C Short Circuit Withstand Time tsc VCC ≦ 360V 5- - Reverse Bias Safe Operating Area RBSOA IC = 12A, VCC = 520V FULL SQUARE - VP = 650V, VGE = 15V RG = 50Ω, Tj = 175°C -86- Fall Time tf Inductive Load - 72 - ns Rise Time tr VGE = 15V, RG = 50Ω -37- Turn - off Delay Time td(off) Tj = 175°C Turn - on Delay Time td(on) IC = 4A, VCC = 400V -17- -69- Fall Time tf Inductive Load - 71 - Turn - on Delay Time td(on) IC = 4A, VCC = 400V -17- ns Rise Time tr VGE = 15V, RG = 50Ω -36- Turn - off Delay Time td(off) Tj = 25°C nC Gate - Emitter Charge Qge IC = 4A -4 - Gate - Collector Charge Qgc VGE = 15V - 5.5 - - 4.5 - Total Gate Charge Qg VCE = 400V - 13.5 - Parameter Symbol Conditions Values Unit Min. Typ. Max. pF Output Capacitance Coes VGE = 0V -14- Reverse Transfer Capacitance Cres f = 1MHz Input Capacitance Cies VCE = 30V - 220 - 3/11 2017.05 - Rev.A |
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