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RGTH80TS65 Arkusz danych(PDF) 2 Page - Rohm |
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2 / 11 page www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Data Sheet RGTH80TS65 Thermal Resistance IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) V Tj = 25°C - 1.6 2.1 Tj = 175°C - 2.1 - VCE(sat) IC = 40A, VGE = 15V - 200 nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 27.6mA 4.5 5.5 6.5 V Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - -- V Collector Cut - off Current ICES VCE = 650V, VGE = 0V -- 10 μA Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 Conditions Values Unit Min. Typ. Max. Collector - Emitter Saturation Voltage Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.64 °C/W Parameter Symbol Values Parameter Symbol 2/9 2015.10 - Rev.C |
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