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LF257H Arkusz danych(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numer części LF257H
Szczegółowy opis  JFET Input Operational Amplifiers
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Producent  NSC [National Semiconductor (TI)]
Strona internetowa  http://www.national.com
Logo NSC - National Semiconductor (TI)

LF257H Arkusz danych(HTML) 1 Page - National Semiconductor (TI)

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LF155/LF156/LF256/LF257/LF355/LF356/LF357
JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational ampli-
fiers to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FETTech-
nology). These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
Features
Advantages
n
Replace expensive hybrid and module FET op amps
n
Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n
Excellent for low noise applications using either high or
low source impedance — very low 1/f corner
n
Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n
New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n
Internal compensation and large differential input voltage
capability
Applications
n
Precision high speed integrators
n
Fast D/A and A/D converters
n
High impedance buffers
n
Wideband, low noise, low drift amplifiers
n
Logarithmic amplifiers
n
Photocell amplifiers
n
Sample and Hold circuits
Common Features
n
Low input bias current:
30pA
n
Low Input Offset Current:
3pA
n
High input impedance:
10
12
n
Low input noise current:
n
High common-mode rejection ratio:
100 dB
n
Large dc voltage gain:
106 dB
Uncommon Features
LF155/
LF355
LF156/
LF256/
LF356
LF257/
LF357
(A
V=5)
Units
j Extremely
fast settling
time to
0.01%
4
1.5
1.5
µs
j Fast slew
rate
5
12
50
V/µs
j Wide gain
bandwidth
2.5
5
20
MHz
j Low input
noise
voltage
20
12
12
Simplified Schematic
00564601
*3pF in LF357 series.
BI-FET, BI-FET IIare trademarks of National Semiconductor Corporation.
December 2001
© 2001 National Semiconductor Corporation
DS005646
www.national.com


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