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IRLU3802PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRLU3802PBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 12/7/04 HEXFET® Power MOSFET VDSS RDS(on) max Qg 12V 8.5m Ω 27nC Notes through are on page 9 PD - 95089A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.7 RθJA Junction-to-Ambient (PCB mount)* ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 12 V VGS Gate-to-Source Voltage ± 12 V ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 84 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 60 A IDM Pulsed Drain Current 320 PD @TC = 25°C Maximum Power Dissipation 88 W PD @TC = 100°C Maximum Power Dissipation 44 W Linear Derating Factor 0.59 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters l Power Management for Netcom, Computing and Portable Applications. l Lead-Free D-Pak I-Pak IRLR3802 IRLU3802 IRLR3802PbF IRLU3802PbF |
Podobny numer części - IRLU3802PBF |
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Podobny opis - IRLU3802PBF |
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