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IRLML6402TR Datasheet(Arkusz danych) 2 Page - International Rectifier

Numer części IRLML6402TR
Szczegółowy opis  HEXFET Power MOSFET
Pobierz  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
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 2 page
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IRLML6402
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
29
43
ns
TJ = 25°C, IF = -1.0A
Qrr
Reverse RecoveryCharge
–––
11
17
nC
di/dt = -100A/µs
‚
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
** For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.009 –––
V/°C
Reference to 25°C, ID = -1mA
‚
––– 0.050 0.065
VGS = -4.5V, ID = -3.7A
‚
––– 0.080 0.135
VGS = -2.5V, ID = -3.1A
‚
VGS(th)
Gate Threshold Voltage
-0.40 -0.55 -0.95
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.0
–––
–––
S
VDS = -10V, ID = -3.7A
‚
–––
–––
-1.0
VDS = -20V, VGS = 0V
–––
–––
-25
VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -12V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 12V
Qg
Total Gate Charge
–––
8.0
12
ID = -3.7A
Qgs
Gate-to-Source Charge
–––
1.2
1.8
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.8
4.2
VGS = -5.0V
‚
td(on)
Turn-On Delay Time
–––
350
–––
VDD = -10V
tr
Rise Time
–––
48
–––
ID = -3.7A
td(off)
Turn-Off Delay Time
–––
588
–––
RG = 89Ω
tf
Fall Time
–––
381
–––
RD = 2.7Ω
Ciss
Input Capacitance
–––
633
–––
VGS = 0V
Coss
Output Capacitance
–––
145
–––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
–––
110
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns




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