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STB28N15 Arkusz danych(PDF) 1 Page - SamHop Microelectronics Corp. |
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STB28N15 Arkusz danych(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STB28N15 Symbol VDS VGS IDM A ID Units Parameter 150 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 150V 32A 50 @ VGS=4.5V 46 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A Ver 1.0 www.samhop.com.tw Apr,08,2016 1 Details are subject to change without notice. TC=25°C W PD °C -55 to 175 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 1.1 °C/W Thermal Resistance, Junction-to-Case R JC TC=100°C A EAS mJ Single Pulse Avalanche Energy d 216 32 94 136 Green Product 22.6 55 °C/W Thermal Resistance, Junction-to-Ambient R JA c c STB S ER IE S TO-263(DD-P AK ) G S D |
Podobny numer części - STB28N15 |
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Podobny opis - STB28N15 |
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