STB520N datasheet(2/8 Pages) SAMHOP

Numer części	STB520N

Szczegółowy opis	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Producent	SAMHOP [SamHop Microelectronics Corp.]

Strona internetowa	http://www.samhop.com.tw

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2 / 8 page

4 Symbol

Min

Typ

Max

Units

BVDSS

200

V

1

IGSS

±100

nA

VGS(th)

2.0

V

52

gFS

58

S

VSD

CISS

4750

pF

COSS

245

pF

CRSS

183

pF

Qg

96

nC

92

nC

Qgs

175

nC

Qgd

38

tD(ON)

76

ns

tr

8.2

ns

tD(OFF)

23

ns

tf

ns

Gate-Drain Charge

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=100V

ID=1A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=100V,ID=11A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=11A

VDS=10V , ID=11A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=160V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

4.0

65

b

f=1.0MHz

b

VDS=100V,ID=11A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=6A

0.74

1.3

V

www.samhop.com.tw

2

2.5

Jul,07,2016

STB520N

Ver 1.0

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.

e.Mounted on FR4 Board of 1 inch2 , 2oz.

_

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