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TA76432S Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TA76432S Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 12 page TA76432FT/FC/F/FR/S 2002-07-12 3 Typical Application Circuits Precautions during Use (1) TA76432FT, TA76432FC, TA76432F/FR, TA76432S These products contain MOS elements. Please take care to avoid generating static electricity when handling these devices. (2) TA76432FT, TA76432FC, TA76432F/FR, TA76432S The oscillation frequency of these devices is determined by the value of the capacitor connected between the anode and the cathode. When establishing maximum operating condition parameters, please derate the maximum rating values specified in these datasheets so as to allow an operational safety margin. Use of a laminated ceramic capacitor is recommended. (3) Precautions when handling anode pin of TA76432FT/TA76432FC Pin 2 and pin 5 should normally be shorted together. If only pin 5 is used, pin 2 should either be left open or always kept at a lower potential than pin 5. Do not leave pin 5 open and use pin 2 only. Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Cathode voltage VKA 20 V Cathode current IK 20 mA Cathode-anode reverse current -IK 10 mA Reference voltage VREF 7 V Reference current IREF 50 mA Reference-anode reverse current -IREF 10 mA TA76432FT 0.45 (Note 1) 0.2 TA76432FC 0.38 (Note 2) TA76432F/FR 0.5 Power dissipation TA76432S PD 0.8 W TA76432FT 277 (Note 1) 625 TA76432FC 328 (Note 2) TA76432F/FR 250 Thermal resistance TA76432S Rth 156 ºC/W Operating temperature Topr -40~85 ºC Junction temperature Tj 150 ºC Storage temperature Tstg -55~150 ºC Note 1: Glass epoxy substrate mounting: 30 mm ´ 30 mm ´ 0.8 mmt (Cu pad area 35 mm 2 ) Note 2: Glass epoxy substrate mounting: 30 mm ´ 30 mm ´ 0.8 mmt (Cu pad area 50 mm 2 ) 1.26 V Reference (VKA = VREF) VOUT = 1.26 V VIN Shunt regulator (VKA > VREF) VIN VOUT R1 I R R 1 V REF 2 1 REF × + ÷÷ ø ö çç è æ + = VOUT R1 R2 VREF |
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Podobny opis - TA76432S |
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