Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

2SK3407 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SK3407
Szczegółowy opis  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3407 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  2SK3407 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3407 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3407 Datasheet HTML 3Page - Toshiba Semiconductor 2SK3407 Datasheet HTML 4Page - Toshiba Semiconductor 2SK3407 Datasheet HTML 5Page - Toshiba Semiconductor 2SK3407 Datasheet HTML 6Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
2SK3407
2002-08-12
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 mA, VDS = 0 V
±30
¾
¾
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
¾
3.4
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
¾
0.48
0.65
W
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 5 A
3.5
7.5
¾
S
Input capacitance
Ciss
¾
1400
¾
Reverse transfer capacitance
Crss
¾
240
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
590
¾
pF
Rise time
tr
¾
35
¾
Turn-on time
ton
¾
50
¾
Fall time
tf
¾
80
¾
Switching time
Turn-off time
toff
¾
260
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
35
¾
Gate-source charge
Qgs
¾
19
¾
Gate-drain “miller” charge
Qgd
VDD ~- 360 V, VGS = 10 V, ID = 10 A
¾
16
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
¾
¾
¾
10
A
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
¾
¾
-1.7
V
Reverse recovery time
trr
¾
280
¾
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/ms
¾
2.7
¾
mC
Marking
Type
K3407
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 ms
0 V
10 V
VGS
RL = 40 W
VDD ~- 200 V
ID = 5 A
VOUT


Podobny numer części - 2SK3407

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Toshiba Semiconductor
2SK3407 TOSHIBA-2SK3407 Datasheet
192Kb / 6P
   Silicon N Channel MOS Type Switching Regulator Applications
logo
VBsemi Electronics Co.,...
2SK3407 VBSEMI-2SK3407 Datasheet
1Mb / 10P
   N-Channel 650V (D-S) Power MOSFET
logo
Toshiba Semiconductor
2SK3407 TOSHIBA-2SK3407_06 Datasheet
192Kb / 6P
   Silicon N Channel MOS Type Switching Regulator Applications
More results

Podobny opis - 2SK3407

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Toshiba Semiconductor
2SK3471 TOSHIBA-2SK3471 Datasheet
104Kb / 3P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
2SK3543 TOSHIBA-2SK3543 Datasheet
234Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
2SK3130 TOSHIBA-2SK3130 Datasheet
203Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK3342 TOSHIBA-2SK3342 Datasheet
129Kb / 3P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)
2SK3567 TOSHIBA-2SK3567 Datasheet
94Kb / 3P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3761 TOSHIBA-2SK3761 Datasheet
89Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
2SK3125 TOSHIBA-2SK3125 Datasheet
226Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3562 TOSHIBA-2SK3562 Datasheet
232Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3310 TOSHIBA-2SK3310 Datasheet
234Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
TPC8202 TOSHIBA-TPC8202 Datasheet
339Kb / 7P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
More results


Html Pages

1 2 3 4 5 6


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com