2N5064RLRM datasheet(2/8 Pages) ONSEMI

Numer części	2N5064RLRM

Szczegółowy opis	Sensitive Gate Silicon Controlled Rectifiers

Download	8 Pages

Scroll/Zoom	100%

Producent	ONSEMI [ON Semiconductor]

Strona internetowa	http://www.onsemi.com

Logo

2 / 8 page

2N5060 Series

http://onsemi.com

2

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

2N5060

2N5061

2N5062

2N5064

VDRM,

VRRM

30

60

100

200

V

On-State Current RMS (180

° Conduction Angles; TC = 80°C)

IT(RMS)

0.8

A

*Average On-State Current

(180

° Conduction Angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

*Peak Non-repetitive Surge Current,

TA = 25°C

(1/2 cycle, Sine Wave, 60 Hz)

ITSM

10

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

0.4

A2s

*Average On-State Current

(180

° Conduction Angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

A

*Forward Peak Gate Power (Pulse Width

v 1.0 msec; TA = 25°C)

PGM

0.1

W

*Forward Average Gate Power (TA = 25°C, t = 8.3 ms)

PG(AV)

0.01

W

*Forward Peak Gate Current (Pulse Width

v 1.0 msec; TA = 25°C)

IGM

1.0

A

*Reverse Peak Gate Voltage (Pulse Width

v 1.0 msec; TA = 25°C)

VRGM

5.0

V

*Operating Junction Temperature Range

TJ

−40 to +110

°C

*Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction−to−Case (Note 2)

RqJC

75

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

*Lead Solder Temperature (Lead Length

q 1/16″ from case, 10 s Max)

−

+230*

°C

2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the

curved surface.

*Indicates JEDEC Registered Data.

Podobny numer części - 2N5064RLRM

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	2N5064RLRMG	116Kb / 7P	Sensitive Gate Silicon Controlled Rectifiers September, 2011 ??Rev. 10

More results

Podobny opis - 2N5064RLRM

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	C106	62Kb / 6P	Sensitive Gate Silicon Controlled Rectifiers August, 2005 ??Rev. 8
SemiWell Semiconductor	MCK100-8	568Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers
	MCR22-8	569Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers
	SCN2C60	623Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers
YENYO TECHNOLOGY Co., L...	MCR100	150Kb / 4P	Sensitive Gate / Silicon Controlled Rectifiers
YENYO TECHNOLOGY Co., L...	MCR100-8A	150Kb / 4P	Sensitive Gate / Silicon Controlled Rectifiers
ON Semiconductor	MCR12DSN-1G	126Kb / 7P	Sensitive Gate Silicon Controlled Rectifiers June, 2013 ??Rev. 7
Shenzhen Winsemi Microe...	WCD6C60S	408Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers
Apollo Electron Co., Lt...	CD6C60S	594Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers
ON Semiconductor	NYC008-6JG-D	147Kb / 7P	Sensitive Gate Silicon Controlled Rectifiers January, 2010 ??Rev. 0

More results

2N5064RLRM Arkusz danych(PDF) 2 Page - ON Semiconductor

2N5064RLRM Arkusz danych(HTML) 2 Page - ON Semiconductor

Podobny numer części - 2N5064RLRM

Podobny opis - 2N5064RLRM

Html Pages

1 2 3 4 5 6 7 8

Arkusz danych Pobierz

Link URL