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BYP25K3 Arkusz danych(PDF) 1 Page - Diotec Semiconductor |
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1 / 2 page BYP25A05 ... BYP25A6 | BYP25K05 ... BYP25K6 BYP25A05 ... BYP25A6 | BYP25K05 ... BYP25K6 Standard Recovery Press-fit Rectifier Diodes Einpress-Gleichrichterdioden mit Standard-Sperrverzug IFAV = 25 A VF < 1.1 V Tjmax = 200°C VRRM = 100...600 V IFSM = 270/300 A trr ~ 1500 ns Version 2018-01-04 Ø 12.75 x 4.2 Press-fit Dimensions - Maße [mm] Typical Applications 50/60 Hz Mains Rectification, Power Supplies, Polarity Protection Commercial grade 1) Typische Anwendungen 50/60 Hz Netzgleichrichtung, Stromversorgungen, Verpolschutz Standardausführung 1) Features High junction temperature Two polarity versions: A = Anode to lead wire K = Cathode to lead wire For press-fit assembly into aluminium cooling plate Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Hohe Sperrschichttemperatur Zwei Polaritäten: A = Anode am Anschlussdraht K = Kathode am Anschlussdraht Für Einpressmontage in Alu-Kühlblech Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Packed in cardboard trays 300 Verpackt in Einlagekartons Weight approx. 10 g Gewicht ca. Plastic material UL 94V-0 Kunststoffmaterial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = N/A Maximum ratings 2) Grenzwerte 2) Type / Wire to / Anode Typ Draht an Cathode Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYP25A05 BYP25K05 50 50 BYP25A1 BYP25K1 100 100 BYP25A2 BYP25K2 200 200 BYP25A3 BYP25K3 300 300 BYP25A4 BYP25K4 400 400 BYP25A6 BYP25K6 600 600 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C 3) IFAV 25 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz TC = 150°C 3) IFRM 90 A Peak forward surge current Stoßstrom in Fluss-Richtung Half sine-wave Sinus-Halbwelle 50 Hz (10 ms) 60 Hz (8.3 ms) IFSM 270 A 300 A Rating for fusing – Grenzlastintegral t < 10 ms i2t 375 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+215°C -50...+215°C Maximum admissible press-in force Maximal zulässige Einpresskraft FpM 4 kN 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben 3 Temperature measured at the metallic base – Temperatur am Metallsockel gemessen © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS Ø 12.75 Ø ±0.5 11 1.3 A K |
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