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TMA10N60H Arkusz danych(PDF) 2 Page - Wuxi Unigroup Microelectronics Company

Numer części TMA10N60H
Szczegółowy opis  600V N-Channel MOSFET
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Producent  WUMC [Wuxi Unigroup Microelectronics Company]
Strona internetowa  http://www.tsinghuaicwx.com/en/index.asp
Logo WUMC - Wuxi Unigroup Microelectronics Company

TMA10N60H Arkusz danych(HTML) 2 Page - Wuxi Unigroup Microelectronics Company

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TMA10N60H
www.tsinghuaicwx.com
Wuxi Unigroup Microelectronics Company
V3.0
Specifications T
J = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS = 0V, ID = 250µA
600
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS = 600V, VGS = 0V, TJ = 25ºC
--
--
1
μA
V
DS = 480V, VGS = 0V, TJ = 125ºC
--
--
100
Gate-Source Leakage
I
GSS
V
GS = ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS = VGS, ID = 250µA
3.0
--
4.0
V
Drain-Source On-Resistance (Note3)
R
DS(on)
V
GS = 10V, ID = 5A
--
0.6
0.72
Ω
Dynamic
Input Capacitance
C
iss
V
GS = 0V,
V
DS = 25V,
f = 1.0MHz
--
1264
--
pF
Output Capacitance
C
oss
--
149
--
Reverse Transfer Capacitance
C
rss
--
18
--
Total Gate Charge
Q
g
V
DD = 480V, ID = 10A,
V
GS = 10V
--
35
--
nC
Gate-Source Charge
Q
gs
--
7
--
Gate-Drain Charge
Q
gd
--
18
--
Turn-on Delay Time
t
d(on)
V
DD = 300V, ID =10A,
R
G = 25 Ω
--
23
--
ns
Turn-on Rise Time
t
r
--
15
--
Turn-off Delay Time
t
d(off)
--
90
--
Turn-off Fall Time
t
f
--
30
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C = 25 ºC
--
--
10
A
Pulsed Diode Forward Current
I
SM
--
--
38
Body Diode Voltage
V
SD
T
J = 25ºC, ISD = 10A, VGS = 0V
--
--
1.4
V
Reverse Recovery Time
t
rr
V
GS = 0V,IS = 12A,
di
F/dt =100A /μs
--
320
--
ns
Reverse Recovery Charge
Q
rr
--
4.2
--
μC
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
I
AS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
3.
Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 1%
2


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