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BAP70-03 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BAP70-03 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2002 Aug 06 2 Philips Semiconductors Product specification Silicon PIN diode BAP70-03 FEATURES • High voltage, current controlled RF resistor for attenuators • Low diode capacitance • Very low series inductance. APPLICATIONS • RF attenuators • (SAT)TV • Car radio. DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage 12 MAM406 Marking code: A9. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 50 V IF continuous forward current − 100 mA Ptot total power dissipation Ts =90 °C − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR =30V − 20 nA Cd diode capacitance VR = 0 V; f = 1 MHz 570 − fF VR = 1 V; f = 1 MHz 400 − fF VR = 5 V; f = 1 MHz 270 − fF VR = 20 V; f = 1 MHz 200 250 fF rD diode forward resistance IF = 0.5 mA; f = 100 MHz 77 100 Ω IF = 1 mA; f = 100 MHz 40 50 Ω IF = 10 mA; f = 100 MHz 5.4 7 Ω IF = 100 mA; f = 100 MHz 1.4 1.9 Ω τ L charge carrier life time when switched from IF =10mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 1.25 −µs LS series inductance IF = 100 mA; f = 100 MHz 1.5 − nH |
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