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IRFP7530 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP7530 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP7530,IIRFP7530 · FEATURES · Static drain-source on-resistance: RDS(on) ≤2mΩ · Enhancement mode: Vth =2.1 to 3.7V (VDS=VGS, ID=250μA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Synchronous Rectification · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 195 A IDM Drain Current-Single Pulsed 760 A PD Total Dissipation @TC=25℃ 341 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.44 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 40 ℃ /W |
Podobny numer części - IRFP7530 |
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Podobny opis - IRFP7530 |
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