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NE33200 Arkusz danych(PDF) 7 Page - NEC

Numer części NE33200
Szczegółowy opis  SUPER LOW NOISE HJ FET
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Producent  NEC [NEC]
Strona internetowa  http://www.nec.com/
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NE33200 Arkusz danych(HTML) 7 Page - NEC

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CHIP DIMENSIONS (Units in µm)
NE33200 (CHIP)
Chip Thickness: 140
µm typical
Note: All dimensions are typical unless otherwise specified
Notes:
1.S-Parameters include Bond Wires:
Gate:
Total 2 wires, 1 per bond pad 0.0129" (327
µm) long, each wire.
Drain:
Total 2 wires, 1 per bond pad 0.0118" (300
µm) long, each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180
µm) each wire.
Wire:
0.0007" (17.8
µm) dia. gold.
2.Gain Calculations:
MAG = Maximum Available gain
MSG = Maximum Stable Gain
PART NUMBER
IDSS RANGE (mA)
NE33200
Standard (15 - 80)
NE33200N
15 - 50
NE33200M
50 - 80
ORDERING INFORMATION
NE33200
DD
G
G
S
S
45
31
47
25
13
400
±40 mm
120
56
66
56
88
61
350
±35
MAG =
|S21|
|S12|
K - 1
).
2
(K ±
∆ = S11 S22 - S21 S12
When K
≤ 1, MAG is undefined and MSG values are used. MSG =
|S21|
|S12|
, K = 1 + | ∆ | - |S
11
| - |S22|
2
2
2
2 |S12 S21|
,
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
• Internet: http://WWW.CEL.COM
04/12/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE


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