NTE29 datasheet(2/2 Pages) NTE

Numer części	NTE29

Szczegółowy opis	Silicon Complementary Transistors High Power, High Current Switch

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Producent	NTE [NTE Electronics]

Strona internetowa	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ

Max

Unit

ON Characteristics (Note 1)

DC Current Gain

hFE

IC = 25A, VCE = 2V

15

–

60

IC = 50A, VCE = 5V

5

–

Collector–Emitter Saturation Voltage

VCE(sat) IC = 25A, IB = 2.5A

–

1

V

IC = 50A, IB = 10A

–

5

V

Base–Emitter Saturation Voltage

VBE(sat) IC = 25A, IB = 2.5A

–

2

V

Base–Emitter ON Voltage

VBE(on)

IC = 25A, VCE = 2V

–

2

V

Dynamic Characteristics

Current Gain–Bandwidth Product

fT

IC = 5A, VCE = 10V, f = 1MHz

2

–

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 0.1MHz

–

1200

pF

Small–Signal Current Gain

hfe

IC = 10A, VCE = 5V, f = 1kHz

15

–

Note 1. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

1.187 (30.16)

.875 (22.2)

Dia Max

.665

(16.9)

.430

(10.92)

Seating

Plane

.040 (1.02)

.312 (7.93) Min

.135 (3.45) Max

.350 (8.89)

Emitter

Collector/Case

Base

.215 (5.45)

.525 (13.35) R Max

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

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