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OP245A Arkusz danych(PDF) 3 Page - TT Electronics.

Numer części OP245A
Szczegółowy opis  Plastic Infrared Emitting Diode
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Producent  TTELEC [TT Electronics.]
Strona internetowa  http://www.ttelectronics.com/
Logo TTELEC - TT Electronics.

OP245A Arkusz danych(HTML) 3 Page - TT Electronics.

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© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
OP240 Series
Issue B
07/2016
Page 3
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage and Operating Temperature Range
-40
o C to +100o C
Reverse Voltage
2.0 V
Continuous Forward Current
50 mA
Peak Forward Current
3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
260° C
(1)
Power Dissipation
100 mW
(2)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
EE (APT)
Apertured Radiant Incidence
OP240A, OP245A
OP240B, OP245B
OP240C
OP240D
0.60
0.40
0.20
0.05
-
-
-
-
-
1.20
0.86
-
mW/
cm
2
IF = 20 mA
(3)
VF
Forward Voltage
-
-
1.80
V
IF = 20 mA
IR
Reverse Current
-
-
100
µA
VR= 2.0 V
λP
Wavelength at Peak Emission
-
890
-
nm
IF = 10 mA
B
Spectral Bandwidth between Half Power
Points
-
80
-
nm
IF = 10 mA
∆λP /∆T
Spectral Shift with Temperature
-
±0.18
-
nm/°C
IF = Constant
θHP
Emission Angle at Half Power Points
-
40
-
Degree IF = 20 mA
tr
Output Rise Time
-
500
-
ns
IF(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
tf
Output Fall Time
-
250
-
ns
IF(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
Electrical Specifications
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be
applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. EE(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to
and centered on the mechanical axis of the lens and 0.653” (6.60 mm) from the lens tip. EE(APT) is not necessarily uniform within the measured
area.


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