Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

TC55VEM208ASTN40 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części TC55VEM208ASTN40
Szczegółowy opis  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55VEM208ASTN40 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

  TC55VEM208ASTN40 Datasheet HTML 1Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 2Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 3Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 4Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 5Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 6Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 7Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 8Page - Toshiba Semiconductor TC55VEM208ASTN40 Datasheet HTML 9Page - Toshiba Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
TC55VEM208ASTN40,55
2002-08-07
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
2.3
3.6
V
VDD = 2.3 V~2.7 V
2.0
VIH
Input High Voltage
VDD = 2.7 V~3.6 V
2.2
VDD + 0.3
V
VIL
Input Low Voltage
−0.3*
VDD × 0.24
V
VDH
Data Retention Supply Voltage
1.5
3.6
V
*:
−2.0 V when measured at a pulse width of 20ns
DC CHARACTERISTICS (Ta
==== −−−−40° to 85°C, VDD ==== 2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
±1.0
µA
IOH
Output High Current VOH = VDD − 0.5 V
−0.5
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
mA
ILO
Output Leakage
Current
CE
= VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD
±1.0
µA
MIN
35
IDDO1
CE
= VIL and R/W = VIH,
IOUT = 0 mA,
Other Input
= VIH/VIL
1
µs
8
mA
MIN
30
IDDO2
Operating Current
CE
= 0.2 V and R/W = VDD − 0.2 V,
IOUT = 0 mA,
Other Input
= VDD − 0.2 V/0.2 V
tcycle
1
µs
3
mA
IDDS1
CE
= VIH
1
mA
VDD =
3.3V
± 0.3 V
Ta
= −40~85°C
10
Ta
= 25°C
0.7
Ta
= −40~40°C
2
IDDS2
Standby Current
CE
= VDD − 0.2 V
VDD =3.0 V
Ta
= −40~85°C
5
µA
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


Podobny numer części - TC55VEM208ASTN40

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Toshiba Semiconductor
TC55VEM316AXBN TOSHIBA-TC55VEM316AXBN Datasheet
209Kb / 14P
   TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN40 TOSHIBA-TC55VEM316AXBN40 Datasheet
209Kb / 14P
   TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN55 TOSHIBA-TC55VEM316AXBN55 Datasheet
209Kb / 14P
   TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM416AXBN55 TOSHIBA-TC55VEM416AXBN55 Datasheet
208Kb / 14P
   1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VEM416BXGN55 TOSHIBA-TC55VEM416BXGN55 Datasheet
238Kb / 18P
   1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
More results

Podobny opis - TC55VEM208ASTN40

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Toshiba Semiconductor
TC58FVM5T2AFT65 TOSHIBA-TC58FVM5T2AFT65 Datasheet
799Kb / 63P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF-133 TOSHIBA-TC55VD1618FF-133 Datasheet
888Kb / 20P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58NYG0S3EBAI4 TOSHIBA-TC58NYG0S3EBAI4 Datasheet
487Kb / 65P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-70 TOSHIBA-TC554161AFTI-70 Datasheet
142Kb / 10P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58NVG0S3ETA00 TOSHIBA-TC58NVG0S3ETA00 Datasheet
486Kb / 65P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM6B2ATG-65 TOSHIBA-TC58FVM6B2ATG-65 Datasheet
531Kb / 62P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512FTI-12 TOSHIBA-TC55V8512FTI-12 Datasheet
170Kb / 10P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4366FF-133 TOSHIBA-TC55V4366FF-133 Datasheet
1Mb / 20P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8128BFT-12 TOSHIBA-TC55V8128BFT-12 Datasheet
373Kb / 10P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V2325FF-100 TOSHIBA-TC55V2325FF-100 Datasheet
1Mb / 20P
   TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com