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TLP421F Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TLP421F Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page TLP421F 2002-09-25 1 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP421F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP421F consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). Maximum rating and electrical characteristics are the same as TLP421 technical datasheet. · Collector−emitter voltage: 80V (min) · Current transfer ratio: 50% (min) Rank GB: 100% (min) · Isolation voltage: 5000 Vrms (min) · UL recognized: UL1577 · BSI approved: BS EN60065: 1994 Approved no. 8411 BS EN60950: 1992 Approved no. 8412 · SEMKO approved: EN60065, EN60950, EN60335 Approved no. 9910249 / 01 Pin Configurations (top view) 1 2 3 4 1 : ANODE 2 : CATHODE 3 : EMITTER 4 : COLLECTOR Unit in mm TOSHIBA 11−5B202 Weight: 0.26 g |
Podobny numer części - TLP421F |
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Podobny opis - TLP421F |
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