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TA20121603DH Arkusz danych(PDF) 3 Page - Powerex Power Semiconductors |
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TA20121603DH Arkusz danych(HTML) 3 Page - Powerex Power Semiconductors |
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3 / 4 page  Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR www.pwrx.com 1600 Amperes Average 2400 Volts Revision Date: 07/30/2013 TA20 1600A Thermal Characteristics Maximum Thermal Resistance, Double Sided Cooling Max. Units Junction-to-Case Case-to-Sink RΘ(J-C) RΘ(C-S) 0.015 0.007 °C/W °C/W Electrical Characteristics, TJ=25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Leakage Current IRRM TJ=125°C, VR = VRRM 100 mA Repetitive Peak Forward Leakage Current IDRM TJ=125°C, VD = VDRM 100 mA Peak On-State Voltage VTM IFM=3000A peak, Duty Cycle < 0.1 % 1.75 V Threshold Voltage, Low-level Slope Resistance, Low-level V(TO)1 rT1 TJ = 125°C, I = 15%IT(AV) to IT(AV) 0.89109 0.2148 V mΩ Threshold Voltage, High-level Slope Resistance, High-level V(TO)2 rT2 TJ = 125°C, I = IT(AV) to ITSM 1.7405 0.1024 V mΩ VTM Coefficients, Low-level TJ = 125°C, I = 15%IT(AV) to IT(AV) VTM = A+ B Ln(I) +C(I) + D Sqrt(I) A = B = C = D = 1.1219 -0.10195 4.764E-05 0.02077 VTM Coefficients, High-level TJ = 125°C, I = IT(AV) to ITSM VTM = A+ B Ln(I) +C(I) + D Sqrt(I) A = B = C = D = -3.7832 0.56271 3.607E-05 0.010389 Typical Turn-On Time ton IT = 1000A, VD = 1500 V 4 µ s Typical Turn-Off Time tq Tj = 125°C, IT = 250A, diR/dt = 50A/µs Reapplied dv/dt = 20 V/µs Linear to 80% VDRM 250 µ s Minimum Critical dv/dt – Exponential to VDRM dv/dt TJ = 125°C 300 V/µ s Gate Trigger Current IGT TJ = 25°C, VD = 12 V 200 mA Gate Trigger Voltage VGT TJ = 25°C, VD = 12 V 4.5 V Non-Triggering Gate Voltage VGDM TJ = 125°C, VD = VDRM 0.15 V Peak Forward Gate Current IGTM 4 A Peak Reverse Gate Voltage VGRM 5 V POWEREX, Inc. 173 Pavilion Ln Youngwood, PA USA 724-925-7272 www.pwrx.com 4.5 |
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