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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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KSB798 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSB798 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted * PW ≤10ms, Duty cycle≤50% Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -1.0 A ICP * Collector Current (Pulse) -1.5 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE1 hFE2 DC Current Gain VCE= -1V, IC= -0.1A VCE= -1V, IC= -1.0A 90 50 400 VCE (sat) Collector-Emitter Saturation Voltage IC= -1.0A, IB= -0.1A -0.4 V VBE (sat) Base-Emitter Saturation Voltage IC= -1.0A, IB= -0.1A -1.2 V VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -10mA -0.6 -0.7 V fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 110 MHz Cob Output Capacitance VCB= -6V, IE=0, f=1MHz 18 pF Classification O Y G hFE1 90 ~ 180 135 ~ 270 200 ~ 400 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W SLX Marking hFE Grade 1. Base 2. Collector 3. Emitter SOT-89 1 |
Podobny numer części - KSB798 |
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Podobny opis - KSB798 |
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