SI1033X datasheet(2/4 Pages) VISHAY

Numer części	SI1033X

Szczegółowy opis	P-Channel 20-V (D-S) MOSFET

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Si1033X

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71428

S-03201—Rev. A, 12-Mar-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.40

–1.20

V

VDS = 0 V, VGS = "2.8 V

"0.5

"1

m

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"1

"2

mA

VDS = –16 V, VGS = 0 V

–1

–500

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85_C

–10

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–200

mA

VGS = –4.5 V, ID = –150 mA

8

VGS = –2.5 V, ID = –125 m A

12

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –1.8 V, ID = –100 m A

15

W

VGS = –1.5 V, ID = –30 m A

20

Forward Transconductancea

gfs

VDS = –10 V, ID = –150 mA

0.4

S

Diode Forward Voltagea

VSD

IS = –150 mA, VGS = 0 V

–1.2

V

Dynamicb

Total Gate Charge

Qg

1500

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –150 mA

150

pC

Gate-Drain Charge

Qgd

450

Turn-On Delay Time

td(on)

55

Rise Time

tr

VDD = –10 V, RL = 65 W

30

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 65 W

ID ^ –150 mA, VGEN = –4.5 V, RG = 10 W

60

ns

Fall Time

tf

30

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)

0

100

200

300

400

500

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.1

0.2

0.3

0.4

0.5

0

123

456

VGS = 5 thru 2.5 V

TJ = –55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.8 V

Podobny numer części - SI1033X

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Vishay Siliconix	SI1033X	82Kb / 5P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI1033X	82Kb / 5P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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