SI7425DN datasheet(1/5 Pages) VISHAY

Numer części	SI7425DN

Szczegółowy opis	P-Channel 12-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

D New PowerPAKr Package

− Low Thermal Resistance, RthJC

− Low 1.07-mm Profile

APPLICATIONS

D Load Switch

D PA Switch

D Battery Switch

Si7425DN

Vishay Siliconix

New Product

Document Number: 72400

S-32411—Rev. B, 24-Nov-03

www.vishay.com

1

P-Channel 12-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.016 @ VGS = −4.5 V

−12.6

−12

0.022 @ VGS = −2.5 V

−10.8

0.029 @ VGS = −1.8 V

−3.5

P-Channel MOSFET

G

D

S

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAKr 1212-8

Bottom View

Ordering Information: Si7425DN-T1—E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

−12

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−12.6

−8.3

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

−9.1

−6.0

A

Pulsed Drain Current

IDM

−25

A

continuous Source Current (Diode Conduction)a

IS

−3.0

−1.3

Maximum Power Dissipationa

TA = 25_C

PD

3.6

1.5

W

Maximum Power Dissipationa

TA = 85_C

PD

1.9

0.8

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

28

35

Maximum Junction-to-Ambienta

Steady State

RthJA

65

81

_C/W

Maximum Junction-to-Case

Steady State

RthJC

2.9

3.8

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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