SI7820DN datasheet(2/5 Pages) VISHAY

Numer części	SI7820DN

Szczegółowy opis	N-Channel 200-V (D-S) MOSFET

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Si7820DN

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72581

S-32411—Rev. B, 24-Nov-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2

4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 200 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 200 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

10

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 2.6 A

0.200

0.240

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 6 V, ID = 2.5 A

0.210

0.250

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 2.6 A

8

S

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.78

1.2

V

Dynamicb

Total Gate Charge

Qg

12.1

18

Gate-Source Charge

Qgs

VDS = 100 V, VGS = 10 V, ID = 2.6 A

2.5

nC

Gate-Drain Charge

Qgd

4.1

Gate Resistance

Rg

f = 1 MHz

1

2.3

3.9

W

Turn-On Delay Time

td(on)

11

20

Rise Time

tr

VDD = 100 V, RL = 100 W

12

20

Turn-Off Delay Time

td(off)

VDD = 100 V, RL = 100 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

30

45

ns

Fall Time

tf

17

30

Source-Drain Reverse Recovery Time

trr

IF = 3.2 A, di/dt = 100 A/ms

65

100

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

10

0

123

456

0

2

4

6

8

10

0

1234

5

VGS = 10 thru 6 V

25_C

TC = 125_C

4 V

−55_C

5 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

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