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FM16W08-SG Arkusz danych(PDF) 1 Page - Cypress Semiconductor

Numer części FM16W08-SG
Szczegółowy opis  64-Kbit (8 K 횞 8) Wide Voltage Bytewide F-RAM Memory
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Producent  CYPRESS [Cypress Semiconductor]
Strona internetowa  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

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FM16W08
64-Kbit (8 K × 8) Wide Voltage Bytewide
F-RAM Memory
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 001-86210 Rev. *F
Revised September 8, 2015
64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory
Features
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K × 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 A (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 C to +85 C
28-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM16W08 is a 8 K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM16W08 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Minimum read and write cycle times
are equal. The F-RAM memory is nonvolatile due to its unique
ferroelectric memory process. These features make the
FM16W08 ideal for nonvolatile memory applications requiring
frequent or rapid writes.
The device is available in a 28-pin SOIC surface mount package.
Device specifications are guaranteed over the industrial
temperature range –40 °C to +85 °C.
For a complete list of related documentation, click here.
Logic Block Diagram
CE
Control
Logic
WE
A
I/O Latch & Bus Driver
OE
DQ
8 K x 8
F-RAM Array
12-0
7-0
A12-0


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