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SI3585DV Arkusz danych(PDF) 5 Page - Vaishali Semiconductor

Numer części SI3585DV
Szczegółowy opis  N- and P-Channel 20-V (D-S) MOSFET
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Si3585DV
Vishay Siliconix
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
10–3
10–2
110
10–1
10–4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
012
34
567
0
2
4
6
8
10
0
1234
5
0
90
180
270
360
450
04
8
12
16
20
VGS = 4.5 thru 4 V
25
_C
TC = –55_C
Crss
Coss
Ciss
VGS = 4.5 V
VGS = 2.5 V
1.5 V
125
_C
2 V
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
VGS = 3.6 V
2.5 V
3 V
3.5 V


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